SISS27ADN www.vishay.com vishay siliconix s16-1833-rev. a, 12-sep-16 1 document number: 75459 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 30 v (d-s) mosfet features ? trenchfet ? gen iii p-channel power mosfet ? low thermal resistance powerpak ? package with small size and low 0.75 mm profile ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? battery management in mobile devices ? adapter and charger switch ? battery switch ?load switch notes a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak 1212-8s is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. f. maximum under steady stat e conditions is 63 c/w. g. t c = 25 c. product summary v ds (v) -30 r ds(on) max. ( ? ) at v gs = -10 v 0.0051 r ds(on) max. ( ? ) at v gs = -6 v 0.0068 r ds(on) max. ( ? ) at v gs = -4.5 v 0.0081 q g typ. (nc) 36.6 i d (a) a, g -50 configuration single powerpak ? 1212-8 s top view 1 3.3 m m 3.3 mm 1 3.3 mm 3.3 mm bottom view d 8 d 7 d 6 d 5 1 s 2 s 3 s 4 g s g d p-channel mo s fet ordering information package powerpak 1212-8s lead (pb)-free and halo gen-free SISS27ADN-t1-ge3 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 continuous drain current (t j = xx c) t c = 25 c i d -50 a a t c = 70 c -50 a t a = 25 c -24.3 b, c t a = 70 c -19.4 b, c pulsed drain current (t = 100 s) i dm -200 continuous source-drain diode current t c = 25 c i s -47.5 t a = 25 c -4 b, c single pulse avalanche current l = 0.1 mh i as -25 single pulse avalanche energy e as 31 mj maximum power dissipation t c = 25 c p d 57 w t c = 70 c 36 t a = 25 c 4.8 b, c t a = 70 c 3.1 b, c operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 10 s r thja 21 26 c/w maximum junction-to-case (drain) steady state r thjc 1.7 2.2
SISS27ADN www.vishay.com vishay siliconix s16-1833-rev. a, 12-sep-16 2 document number: 75459 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = -250 a -30 - - v v ds temperature coefficient ? v ds /t j i d = -250 a - -20.6 - mv/c v gs(th) temperature coefficient ? v gs(th) /t j -5- gate-source threshold voltage v gs(th) v ds = v gs , i d = -250 a -1 - -2.2 v gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = -30 v, v gs = 0 v - - -1 a v ds = -30 v, v gs = 0 v, t j = 70 c - - -10 on-state drain current a i d(on) v ds ? -10 v, v gs = -10 v -30 - - a drain-source on-state resistance a r ds(on) v gs = -10 v, i d = -15 a - 0.0042 0.0051 ? v gs = -6 v, i d = -10 a - 0.0056 0.0068 v gs = -4.5 v, i d = -5 a - 0.0067 0.0081 forward transconductance a g fs v ds = -16 v, i d = -15 a - 57 - s dynamic b input capacitance c iss v ds = -15 v, v gs = 0 v, f = 1 mhz - 4660 - pf output capacitance c oss - 502 - reverse transfer capacitance c rss - 440 - total gate charge q g v ds = -15 v, v gs = -10 v, i d = -24.3 a - 77.5 117 nc v ds = -15 v, v gs = -4.5 v, i d = -24.3 a - 36.6 55 gate-source charge q gs - 11.8 - gate-drain charge q gd - 11.4 - gate resistance r g f = 1 mhz 0.6 3 6 ? turn-on delay time t d(on) v dd = -15 v, r l = 0.77 ? , i d ? -19.4 a, v gen = -4.5 v, r g = 1 ? -4872 ns rise time t r -3542 turn-off delay time t d(off) -3846 fall time t f -2233 turn-on delay time t d(on) v dd = -15 v, r l = 0.77 ? , i d ? -19.4 a, v gen = -10 v, r g = 1 ? -1218 rise time t r -1827 turn-off delay time t d(off) -6075 fall time t f -1827 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - - -50 a pulse diode forward current i sm - - -200 body diode voltage v sd i s = -19.4 a, v gs = 0 v - -0.8 -1.2 v body diode reverse recovery time t rr i f = -19.4 a, di/dt = 100 a/s, t j = 25 c -4060ns body diode reverse recovery charge q rr -2233nc reverse recovery fall time t a -18- ns reverse recovery rise time t b -18-
SISS27ADN www.vishay.com vishay siliconix s16-1833-rev. a, 12-sep-16 3 document number: 75459 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge transfer characteristics capacitance on-resistance vs. junction temperature 10 100 1000 10000 0 20 40 60 80 100 00.511.5 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 5 v v gs = 4 v v gs = 3 v 10 100 1000 10000 0.002 0.004 0.006 0.008 0.010 0 20406080100 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v v gs = 6 v 10 100 1000 10000 0 2 4 6 8 10 0 20406080 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line v ds = 8 v v ds = 15 v v ds = 24 v i d = -24.3 a 10 100 1000 10000 0 20 40 60 80 012345 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0.7 0.9 1.1 1.3 1.5 -50-25 0 255075100125150 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line v gs = 10 v, i d = 15 a v gs = 4.5 v, 5 a v gs = 6 v, 10 a
SISS27ADN www.vishay.com vishay siliconix s16-1833-rev. a, 12-sep-16 4 document number: 75459 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50-25 0 255075100125150 axis title 1st line 2nd line 2nd line v gs(th) (v) t j - temperature (c) 2nd line i d = 250 a 10 100 1000 10000 0 0.003 0.006 0.009 0.012 0.015 246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 150 c i d = 15 a 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 power (w) time ( s ) 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.1 1 10 100 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t a = 25 c single pulse bvdss limited 100 ms 10 ms 1 ms 100 s 10 s, 1 s dc i d limited
SISS27ADN www.vishay.com vishay siliconix s16-1833-rev. a, 12-sep-16 5 document number: 75459 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current derating a power, junction-to-case power, junction-to-ambient note a. the power dissipation p d is based on t j max. = 150 c, using junction-to-ca se thermal resistance, and is mo re useful in se ttling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 10 100 1000 10000 0 20 40 60 80 100 0255075100125150 axis title 1st line 2nd line 2nd line i d - drain current (a) t c - case temperature (c) 2nd line package limited 10 100 1000 10000 0 14 28 42 56 70 0255075100125150 axis title 1st line 2nd line 2nd line power (w) t c - case temperature (c) 2nd line 10 100 1000 10000 0 0.6 1.2 1.8 2.4 0255075100125150 axis title 1st line 2nd line 2nd line power (w) t a - ambient temperature (c) 2nd line
SISS27ADN www.vishay.com vishay siliconix s16-1833-rev. a, 12-sep-16 6 document number: 75459 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75459 . 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective tran s ient thermal impedance sq uare wave pul s e duration ( s ) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pul s e t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 63 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted 0.1 1 0.0001 0.001 0.01 0.1 normalized effective tran s ient thermal impedance sq uare wave pul s e duration ( s ) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pul s e
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